发明名称 THRESHOLD VOLTAGE MEASURING DEVICE
摘要 A threshold voltage measuring device may include a metal-oxide-semiconductor (MOS) transistor, a drain voltage clamping circuit configured to control a drain voltage of the MOS transistor wherein the drain voltage having a substantially constant level, and a constant current supply circuit configured to cause a drain-source current to flow through the MOS transistor wherein the drain-source current having a substantially constant magnitude.
申请公布号 US2017003338(A1) 申请公布日期 2017.01.05
申请号 US201615006038 申请日期 2016.01.25
申请人 SK hynix Inc. ;INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 AN Youngjae;PARK Jung-Hyun;KIM Kiryong;JUNG Seong-Ook;YIM Hyucksang
分类号 G01R31/26 主分类号 G01R31/26
代理机构 代理人
主权项 1. A threshold voltage measuring device comprising: a metal-oxide-semiconductor (MOS) transistor; a drain voltage clamping circuit configured to control a drain voltage of the MOS transistor, the drain voltage having a substantially constant level; and a constant current supply circuit configured to cause a drain-source current to flow through the MOS transistor, the drain-source current having a substantially constant magnitude.
地址 Icheon KR