发明名称 |
THRESHOLD VOLTAGE MEASURING DEVICE |
摘要 |
A threshold voltage measuring device may include a metal-oxide-semiconductor (MOS) transistor, a drain voltage clamping circuit configured to control a drain voltage of the MOS transistor wherein the drain voltage having a substantially constant level, and a constant current supply circuit configured to cause a drain-source current to flow through the MOS transistor wherein the drain-source current having a substantially constant magnitude. |
申请公布号 |
US2017003338(A1) |
申请公布日期 |
2017.01.05 |
申请号 |
US201615006038 |
申请日期 |
2016.01.25 |
申请人 |
SK hynix Inc. ;INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
AN Youngjae;PARK Jung-Hyun;KIM Kiryong;JUNG Seong-Ook;YIM Hyucksang |
分类号 |
G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
1. A threshold voltage measuring device comprising:
a metal-oxide-semiconductor (MOS) transistor; a drain voltage clamping circuit configured to control a drain voltage of the MOS transistor, the drain voltage having a substantially constant level; and a constant current supply circuit configured to cause a drain-source current to flow through the MOS transistor, the drain-source current having a substantially constant magnitude. |
地址 |
Icheon KR |