| 摘要 |
A silicon-based germanium photoelectric detector, comprising an optical waveguide layer (120), a silicon oxidation layer (110) and a silicon substrate (100) which are stacked in sequence from top to bottom, wherein the optical waveguide layer (120) comprises an optical coupling region (121), a planar optical waveguide region (122) and an optical output region (123) which are distributed in sequence in the propagation direction of an optical signal, a coupling grating (1211) for receiving the optical signal and guiding the optical signal to the planar optical waveguide region (122) being formed on the optical coupling region (121); and the silicon-based germanium photoelectric detector also comprises a germanium layer (130) stacked on the optical output region (123), a silicon covering layer (140) stacked on the germanium layer (130), a first electrode (150) formed on the silicon covering layer (140) and a second electrode (160) formed on the optical output region (123), wherein the germanium layer (130) receives the optical signal from the optical output region (123) and converts the optical signal into an electrical signal. By introducing a silicon covering layer, the bandwidth is greatly increased, and meanwhile, the dark current of a photoelectric detector is greatly reduced, so that the comprehensive performance index of the photoelectric detector is improved, and the requirements of high-speed optical communication and optical interconnection systems can be better satisfied. |
