IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND CAMERA

摘要

A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2 × 10 16 atoms/cm 3 and not greater than 4 × 10 17 atoms/cm 3 , the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2 × 10 16 atoms/cm 3 and not greater than 4 × 10 17 atoms/cm 3 ; and forming a photoelectric conversion element in the second semiconductor region after the annealing.