摘要 |
The present disclosure is drawn to amorphous thin metal films and associated methods. Generally, an amorphous thin metal film can comprise a combination of four metals or metalloids including: 5 at % to 85 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 85 at % of a first metal; 5 at % to 85 at % of a second metal; and 5 at % to 85 at % of a third metal wherein each metal is independently selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum, wherein the first metal, the second metal, and the third metal are different metals. Typically, the four elements account for at least 70 at % of the amorphous thin metal film. |
申请人 |
Hewlett-Packard Development Company L.P. |
发明人 |
ABBOTT, James, Elmer, Jr.;AGARWAL, Arun, K.;PUGLIESE, Roberto, A.;LONG, Greg, Scott;HORVATH, Stephen;KESZLER, Douglas, A.;WAGER, John;OLSEN, Kristopher;MCGLONE, John |