| 摘要 |
A method for manufacturing a transistor device comprising multiple nanowire channels arranged above one another in a vertical stack, comprising
- providing a substrate;
- growing a layer stack on the substrate in at least a first channel region, the layer stack comprising a plurality of basic layer stacks, the basic layer stack comprising a first silicon germanium layer, a second silicon germanium layer and a third silicon germanium layer in a predetermined order, the first, second and third silicon germanium layers having substantially different germanium concentrations;
- selectively removing a first layer of each of the basic layer stacks, with respect to a second and a third layer of the respective stack, thereby creating gaps in the layer stack where the first layers were present before;
- selectively removing a second layer of each of the basic layer stacks, with respect to the third layer, wherein the removal of the second layer occurs at least partially from within the gaps, thereby defining the nanowire channels; and associated CMOS devices. |
