| 主权项 |
1. A laminated busbar for use in a NPC three-level power converter, comprising:
a first layer of busbar comprising a neutral-point sub busbar, configured to make electrical connections between respective components in the NPC three-level power converter and a neutral-point potential; and a second layer of busbar comprising a plurality of sub busbars, configured to make electrical connections between the respective components in the NPC three-level power converter and a positive DC input, a negative DC input and an AC input/output in the NPC three-level power converter and electrical connections between the respective components, wherein, the NPC three-level power converter comprises: a first semiconductor module comprising a first semiconductor component located at an upper arm of the NPC three-level power converter and a first freewheeling diode connected in parallel with the first semiconductor component; a second semiconductor module comprising a second semiconductor component located at an upper arm of the NPC three-level power converter and a second freewheeling diode connected in parallel with the second semiconductor component; a third semiconductor module comprising a third semiconductor component located at a lower arm of the NPC three-level power converter and a third freewheeling diode connected in parallel with the third semiconductor component; a fourth semiconductor module comprising a fourth semiconductor component located at a lower arm of the NPC three-level power converter and a fourth freewheeling diode connected in parallel with the fourth semiconductor component; a fifth semiconductor module comprising a first clamping diode, a terminal of which is connected between the first semiconductor component module and the second semiconductor module, and another terminal of which is connected to the neutral-point potential of the NPC three-level power converter; and a sixth semiconductor module comprising a second clamping diode, a terminal of which is connected between the third semiconductor module and the fourth semiconductor module, and another terminal of which is connected to the neutral-point potential of the NPC three-level power converter; wherein the second layer of busbar comprises:
a first sub busbar configured to make electrical connection between the first semiconductor module and the positive DC input;a second sub busbar configured to make electrical connections between the first semiconductor module, the second semiconductor module and the fifth semiconductor module;a third sub busbar configured to make electrical connections between the third semiconductor module, the fourth semiconductor module and the fifth semiconductor module;a fourth sub busbar configured to make electrical connection between the fourth semiconductor module and the negative DC input; anda fifth sub busbar configured to make electrical connections between the second semiconductor module, the third semiconductor module and the AC input/output; and wherein the neutral-point sub busbar is respectively connected to another terminal of the first clamping diode and another terminal of the second clamping diode. |
