发明名称 P-type oxide, composition for producing p-type oxide, method for producing p-type oxide, semiconductor element, display element, image display device, and system
摘要 To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.
申请公布号 US9536957(B2) 申请公布日期 2017.01.03
申请号 US201214360791 申请日期 2012.11.28
申请人 RICOH COMPANY, LTD. 发明人 Abe Yukiko;Ueda Naoyuki;Nakamura Yuki;Takada Mikiko;Matsumoto Shinji;Sone Yuji;Saotome Ryoichi
分类号 H01L29/24;C01G30/00;H01L21/02;H01L29/861;C01G19/00;H01L29/786;G02F1/1368;H01L27/12;H01L27/32 主分类号 H01L29/24
代理机构 Cooper & Dunham LLP 代理人 Cooper & Dunham LLP
主权项 1. A p-type amorphous oxide compound without a Cu-metal, comprising: an oxide, wherein the oxide consists of: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type amorphous oxide compound is without unoxidized Cu alloy or elemental Cu metal.
地址 Tokyo JP