CMOS ultrasonic transducers and related apparatus and methods

摘要

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

主权项

1. An apparatus, comprising:
a plurality of ultrasound sources comprising a first ultrasound source, a second ultrasound source, and a third ultrasound source, wherein at least one of the first ultrasound source, second ultrasound source, or third ultrasound source is a CMOS ultrasonic transducer (CUT) comprising a first wafer having a cavity formed therein, first processing circuitry, a membrane sealing the cavity, and an electrical contact on the first wafer, the electrical contact disposed beneath a bottom side of the membrane, physically contacting the bottom side of the membrane and connecting the membrane to the first processing circuitry, the bottom side of the membrane being proximate the cavity, wherein the bottom side of the membrane and the electrical contact physically contacting the bottom side of the membrane comprise a same material; a first ultrasound sensor and a second ultrasound sensor; and second processing circuitry coupled to the first ultrasound sensor and the second ultrasound sensor and configured to receive and discriminate between, for each of the first and second ultrasound sensors, respective source signals emitted by the first, second, and third ultrasound sources, wherein the first ultrasound source, second ultrasound source, and the first ultrasound sensor lie in a first plane, and wherein the second ultrasound source, the third ultrasound source, and the first ultrasound sensor lie in a second plane different than the first plane.