Method of manufacturing semiconductor light emitting device, and semiconductor light emitting device

摘要

When an uneven pattern is formed on a light extraction surface composed of a semiconductor crystal by wet-etching using an alkaline solution, a plurality of convex portions cannot be formed in a desired arrangement. A method of manufacturing a semiconductor light emitting device includes a light extraction surface composed of a semiconductor crystal, wherein when the uneven pattern is formed by a plurality of convex portions on the light extraction surface, first, a plurality of impressions are formed on the light extraction surface of a semiconductor layer composed of a semiconductor crystal using a processing substrate, and next, by applying wet-etching to the light extraction surface using an alkaline solution, to thereby form convex portions with a portion where each impression is formed as a top portion, and a plurality of facets of the semiconductor crystal as a side face thereof.

主权项

1. A method of manufacturing a semiconductor light emitting device having a light extraction surface and composed of a semiconductor crystal, comprising:
forming an uneven pattern on the light extraction surface, the formation of the uneven pattern further comprising: a first step of forming a plurality of pressed marks on the light extraction surface; and a second step of forming a plurality of convex portions with portions where the pressed marks are formed as top portions and a plurality of facets of the semiconductor crystal as a side face thereof, by applying etching to the light extraction surface on which the plurality of pressed marks are formed.