发明名称 Prism-coupling systems and methods for characterizing ion-exchanged waveguides with large depth-of-layer
摘要 Prism-coupling systems and methods for characterizing large depth-of-layer waveguides formed in glass substrates are disclosed. One method includes making a first measurement after a first ion-exchange process that forms a deep region and then performing a second measurement after a second ion-exchange process that forms a shallow region. Light-blocking features are arranged relative to the prism to produce a mode spectrum where the contrast of the mode lines for the strongly coupled low-order modes is improved at the expense of loss of resolution for measuring characteristics of the shallow region. Standard techniques for determining the compressive stress, the depth of layer or the tensile strength of the shallow region are then employed. A second measurement can be made using a near-IR wavelength to measure characteristics of the deeper, first ion-exchange process. Systems and methods of measuring ion-exchanged samples using shape control are also disclosed.
申请公布号 US9534981(B2) 申请公布日期 2017.01.03
申请号 US201514966642 申请日期 2015.12.11
申请人 Corning Incorporated 发明人 Roussev Rostislav Vatchev;Schneider Vitor Marino;Young Emily Elizabeth
分类号 G01B11/16;G01M11/08;G02B6/134;G02B6/34;G02B6/14;G02B6/36;G01L1/24;C03C21/00;G01N21/41;G01N21/84;G01B11/22;G01N21/23;G02B5/04;G01B11/06 主分类号 G01B11/16
代理机构 代理人 Schaeberle Timothy M.
主权项 1. A method of characterizing a double ion-exchanged (DIOX) waveguide formed in a substrate, comprising: performing a first ion-exchange in the glass substrate to form the waveguide, the waveguide having a deep ion-exchange region with a first profile and a depth-of-layer (DOL); capturing a first mode spectrum of the waveguide and determining the DOL from the first mode spectrum; performing a second ion-exchange in the glass substrate to alter the first profile and to define a shallow ion-exchange region with a steep profile; capturing a second mode spectrum of the waveguide by partially blocking a portion of the mode spectrum associated with the deep ion-exchange region to improve the contrast of a portion of the mode spectrum associated with the shallow ion-exchange region; and determining from the improved-contrast second mode spectrum at least one of a compressive stress, a tensile strength, and a surface stress of the waveguide for the shallow ion-exchange region.
地址 Corning NY US