发明名称 Ferroelectric nanoshell devices
摘要 Disclosed herein are nanoscale devices comprising one or more ferroelectric nanoshells characterized as having an extreme curvature in at least one spatial dimension. Also disclosed are ferroelectric field effect transistors and metal ferroelectric metal capacitors comprising one or more ferroelectric nanoshells. Methods for controlling spontaneous ferroelectric polarization in nanoshell devices are also disclosed.
申请公布号 US9538672(B2) 申请公布日期 2017.01.03
申请号 US201514867257 申请日期 2015.09.28
申请人 Drexel University 发明人 Spanier Jonathan E;Nonnenmann Stephen S;Leaffer Oren David
分类号 H05K5/00;B82Y10/00;H01G4/008;H01G4/12;H01G4/33;H01L29/06;H01L27/02;H01L49/02;H01L29/775;H01L43/02;H01L29/78;H01G4/005;H01L21/28;H01L29/66 主分类号 H05K5/00
代理机构 Baker & Hostetler LLP 代理人 Baker & Hostetler LLP
主权项 1. A nanoscale device, comprising: a nanoshell comprising a ferroelectric material, the nanoshell comprising: an inner nanoshell surface; and an outer nanoshell surface having a radius of curvature in the range of from 5 nm to 500 nm, and the thickness between said inner nanoshell surface and said outer nanoshell surface in the range of from greater than 1 nm to less than 100 nm; and wherein the ferroelectric nanoshell is characterized as being ferroelectric, ferromagnetic, or both; a first amount of conductive material that surmounts at least a portion of the outer nanoshell surface; and a second amount of conductive material that surmounts at least a portion of the inner nanoshell surface.
地址 Philadelphia PA US