| 发明名称 | Treating a capping layer of a mask | ||
| 摘要 | A method for forming a lithography mask includes forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material, forming a patterned patterning layer on the capping layer, and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15. | ||
| 申请公布号 | US9535317(B2) | 申请公布日期 | 2017.01.03 |
| 申请号 | US201414582459 | 申请日期 | 2014.12.24 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Hsu Pei-Cheng;Lin Chih-Cheng;Lien Ta-Cheng;Chen Wei-Shiuan;Lee Hsin-Chang;Yen Anthony |
| 分类号 | G03F1/24;G03F1/26;G03F1/48 | 主分类号 | G03F1/24 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method for forming a lithography mask, the method comprising: forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material; forming a patterned patterning layer on the capping layer; and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15. | ||
| 地址 | Hsin-Chu TW | ||