Probe assembly and method for contactless electrical characterization of buried conducting layers

摘要

A probe assembly includes plural capacitive contacts that are separate from each other and a conductive depletion gate disposed between and separating the contacts from each other. The depletion gate is configured to receive a direct electric voltage to deplete regions of a sample under test of electrons. The contacts are configured to be placed in close proximity to a buried conducting layer in the sample under test without engaging the buried conducting layer, thereby capacitively coupling to the buried conducting layer. A first subset of the capacitive contacts is configured to apply an alternating electric current to a portion of the sample under test and a second subset of the capacitive contacts is configured to sense an alternating voltage response of the portion of the sample under test to characterize one or more electrical properties of the sample under test without the capacitive contact with the buried conductive layer.

主权项

1. A probe assembly comprising:
plural conductive capacitive contacts that are separate from each other; and a conductive depletion gate disposed between and separating the capacitive contacts from each other, the depletion gate configured to receive an electric voltage in order to deplete regions of a sample under test of electrons, the sample under test includes a semiconductor or insulator body having a buried conducting layer, wherein the capacitive contacts are configured to be placed in close proximity to the buried conducting layer in the sample under test without engaging the buried conducting layer, a first subset of the capacitive contacts configured to apply an alternating electric current to a portion of the sample under test and a second subset of the capacitive contacts configured to sense an alternating voltage response of the portion of the sample under test in order to characterize one or more electrical properties of the sample under test without the capacitive contacts having ohmic contact with the buried conducting layer.