| 发明名称 | Reduction of degradation due to hot carrier injection | ||
| 摘要 | In a general aspect, a high-voltage metal-oxide-semiconductor (HVMOS) device can include comprising a first gate dielectric layer disposed on a channel region of the HVMOS device and a second gate dielectric layer disposed on at least a portion of a drift region of the HVMOS device. The drift region can be disposed laterally adjacent to the channel region. The second gate dielectric layer can have a thickness that is greater than a thickness of the first gate dielectric layer. | ||
| 申请公布号 | US9537001(B2) | 申请公布日期 | 2017.01.03 |
| 申请号 | US201514752373 | 申请日期 | 2015.06.26 |
| 申请人 | Fairchild Semiconductor Corporation | 发明人 | Hao Jifa;Hahn Daniel |
| 分类号 | H01L29/66;H01L29/78;H01L29/423;H01L29/06;H01L29/40 | 主分类号 | H01L29/66 |
| 代理机构 | Brake Hughes Bellermann LLP | 代理人 | Brake Hughes Bellermann LLP |
| 主权项 | 1. A high-voltage metal-oxide-semiconductor (HVMOS) device comprising: a first gate dielectric layer disposed on a channel region of the HVMOS device; and a second gate dielectric layer disposed on at least a portion of a drift region of the HVMOS device, the drift region being disposed laterally adjacent to the channel region, the first gate dielectric having a portion disposed under at least a portion of the second gate dielectric, the second gate dielectric layer having a thickness that is greater than a thickness of the first gate dielectric layer. | ||
| 地址 | San Jose CA US | ||