Slurry for chemical mechanical polishing and polishing method for substrate using same

摘要

The present invention provides a slurry for chemical mechanical polishing comprising water-soluble clathrate compound (a), polymer compound (b) having an acidic group optionally in a salt form as a side chain, polishing abrasive grain (c) and water (d), wherein the content of the water-soluble clathrate compound (a) is 0.001 mass %-3 mass % of the total amount of the slurry, the polymer compound (b) has a weight average molecular weight of not less than 1,000 and less than 1,000,000, and the content of the polymer compound (b) is 0.12 mass %-3 mass % of the total amount of the slurry, and a polishing method for substrate using the slurry.

主权项

1. A method of polishing a silicon oxide film on a silicon nitride film on a substrate, comprising relatively moving a substrate and a polishing pad while supplying a slurry suitable for chemical mechanical polishing between the substrate and the polishing pad to polish the silicon oxide film to expose the silicon nitride film, wherein
the slurry comprises water-soluble clathrate compound (a), polymer compound (b) having carboxy group optionally in a salt form as a side chain, an inorganic compound particle (c) and water (d), the water-soluble clathrate compound (a) is contained in 0.001 mass %-3 mass % of the total amount of the slurry, the polymer compound (b) has a weight average molecular weight of not less than 1,000 and less than 1,000,000, the polymer compound (b) comprises polymer (b-1) comprising (meth)acrylic acid and/or a salt thereof in a unit amount of not less than 25 mass % in the polymer, and the polymer compound (b) is contained in 0.12 mass %-3 mass % of the total amount of the slurry, and the inorganic compound particle (c) consists of cerium oxide.