Tellurium compounds useful for deposition of tellurium containing materials

摘要

Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

主权项

1. A method of forming a phase change material comprising a tellurium-containing film, comprising volatilizing a tellurium precursor composition to form a tellurium precursor vapor, and contacting the tellurium precursor vapor with a substrate to deposit tellurium thereon, wherein the tellurium precursor composition comprises a tellurium precursor comprising a diorgano ditelluride compound wherein each organo group is the same and is selected from the group consisting of C1-C8 alkyl; C1-C12 hydrocarbyl selected from aryl, fluoroalkyl, allyl, alkenyl or dienyl; silyl; and substituted silyl.