SOI substrate, method for manufacturing the same, and semiconductor device

摘要

An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.

主权项

1. A method for bonding a first substrate and a second substrate, comprising the steps of:
forming a first insulating film on the first substrate, the first insulating film comprising silicon nitride; forming a second insulating film on the first insulating film by chemical vapor deposition method using organic silane gas; and bonding the first substrate and the second substrate with the first insulating film and the second insulating film interposed therebetween.