Mask for EUV lithography, EUV lithography system and method for optimising the imaging of a mask

摘要

A mask (105) for EUV lithography includes a substrate (107), a multi-layer coating (108) applied to the substrate (107) and a mask structure (109) which is applied to the multi-layer coating (108) and which has an absorber material, the mask structure (109) having a maximum thickness of less than 100 nm, preferably not exceeding a maximum thickness of 30 nm, particularly preferably 20 nm, in particular 10 nm. Also disclosed is an EUV lithography system having such a mask (105) and a method for optimizing the imaging of such a mask (105).

主权项

1. A mask for extreme ultraviolet (EUV) lithography comprising:
a substrate, a multi-layer coating applied to the substrate, and a mask structure applied to the multi-layer coating and which has an absorber material, wherein the mask structure has a maximum thickness of less than 100 nm, and wherein the multi-layer coating has an optical design which comprises a positionally-dependent variation of a thickness of a first layer of the multi-layer coating which is dependent on a pitch of the mask structure, and wherein the optical design comprises a positionally-dependent variation of a thickness of a second layer of the multi-layer coating that is dependent on the pitch of the mask structure.