Magnetoresistance sensor with perpendicular anisotropy

摘要

A nanoscale tunnel magneto-resistance (TMR) sensor comprising an in-plane-magnetized reference layer and a free layer comprising interfacial perpendicular anisotropy, wherein the free layer comprises a sensing layer for sensing resistance as a function of applied magnetic field and is tunable to vary the direction of the sensing layer magnetization to be in-plane, canted, or out-of-plane.

主权项

1. A magneto-resistance (MR) sensor, comprising:
an in-plane magnetized reference layer; and a sensing layer comprising a film plane, the sensing layer having interfacial anisotropy comprising a magnetization direction out of plane with respect to the film plane; wherein the sensing layer and reference layer are separated by a dielectric barrier; wherein the sensing layer is tunable to vary the direction of the sensing layer magnetization to be canted or perpendicular out of plane to the film plane to modify sensor sensitivity and linearity; and wherein the interfacial anisotropy of the sensing layer is configured to be tuned by varying the thickness of the sensing layer and application of a voltage applied across the dielectric barrier.