| 发明名称 | Grapho-epitaxy method for making patterns on the surface of a substrate | ||
| 摘要 | A method for making patterns on a substrate, includes forming an assembly guide on first and second areas of the substrate, the assembly guide having, compared to a reference surface, openings with an opening ratio in the first area greater than that of the second area; depositing a block copolymer layer on the substrate to entirely fill the assembly guide and form an over-thickness on the reference surface; assembling the block copolymer, resulting in an organised portion of the block copolymer layer inside the openings; thinning uniformly the block copolymer layer, until a thickness corresponding to the organised portion of the block copolymer layer is reached; eliminating one of the phases of the assembled block copolymer, resulting in a plurality of initial patterns extending into the layer of block copolymer; and transferring the initial patterns of the block copolymer layer into the substrate to form the final patterns. | ||
| 申请公布号 | US9535329(B2) | 申请公布日期 | 2017.01.03 |
| 申请号 | US201514854951 | 申请日期 | 2015.09.15 |
| 申请人 | COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES | 发明人 | Pimenta Barros Patricia;Tiron Raluca;Chevalier Xavier;Gharbi Ahmed |
| 分类号 | H01L21/311;G03F7/40;G03F7/16;G03F7/00;H01L21/027;H01L21/033;H01L21/308 | 主分类号 | H01L21/311 |
| 代理机构 | Pillsbury Winthrop Shaw Pittman LLP | 代理人 | Pillsbury Winthrop Shaw Pittman LLP |
| 主权项 | 1. A method for producing final patterns on a surface of a substrate by self-assembly of block copolymer, comprising: forming an assembly guide on first and second areas of the substrate, the assembly guide having, compared to a reference surface, openings with an opening ratio in the first area greater than that of the second area; depositing a layer of block copolymer on the substrate, such that the block copolymer layer entirely fills the assembly guide and forms an over-thickness on the reference surface; assembling the block copolymer, resulting in an organised portion of the block copolymer layer inside the openings of the assembly guide; thinning uniformly the block copolymer layer, until a thickness corresponding to the organised portion of the block copolymer layer is reached; eliminating one of the phases of the assembled block copolymer, resulting in a plurality of initial patterns extending into the block copolymer layer; and transferring the initial patterns of the block copolymer layer into the substrate to form said final patterns. | ||
| 地址 | Paris FR | ||