Methods of manufacturing a semiconductor device

摘要

The inventive concepts provide methods of forming a semiconductor device. The method includes forming a neutral layer having a photosensitive property and a reflow property on an anti-reflective coating layer, performing an exposure process and a development process on the neutral layer to form a preliminary neutral pattern at least partially exposing the anti-reflective coating layer, heating the preliminary neutral pattern to form a neutral pattern, forming a block copolymer layer on the neutral pattern, and heating the block copolymer layer to form a block copolymer pattern. The block copolymer pattern includes a first pattern disposed on the anti-reflective coating layer exposed by the neutral pattern, and a second pattern disposed on the neutral pattern and chemically bonded to the first pattern.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a neutral layer on an anti-reflective coating layer, the neutral layer having a photosensitive property and a reflow property; performing an exposure process and a development process on the neutral layer to form a preliminary neutral pattern having a first opening, wherein the first opening exposes the anti-reflective coating layer and has a first width; heating the preliminary neutral pattern to form a neutral pattern having a second opening, wherein the second opening exposes the anti-reflective coating layer and has a second width; forming a block copolymer layer on the neutral pattern; and heating the block copolymer layer to form a block copolymer pattern comprising: a first pattern disposed in the second opening of the neutral pattern; and a second pattern disposed on the neutral pattern and chemically bonded to the first pattern; wherein the second width is less than the first width.