发明名称 Substrate structure and manufacturing method thereof
摘要 A substrate structure is provided. The substrate structure includes a substrate and a carrier. The substrate includes a first through hole, a first surface and a second surface opposite to the first surface. The first through hole penetrates the substrate for connecting the first surface and the second surface. The carrier includes a second through hole, a release layer, an insulating paste layer and a metal layer. The insulating paste layer is disposed between the release layer and the metal layer. The carrier is attached to the second surface with the release layer thereof. The second through hole corresponds to the first through hole and penetrates the carrier for exposing the first through hole.
申请公布号 US9538647(B2) 申请公布日期 2017.01.03
申请号 US201414450297 申请日期 2014.08.04
申请人 SUBTRON TECHNOLOGY CO., LTD. 发明人 Wang Chao-Min
分类号 H01L21/84;H05K1/03;H05K1/02;H05K1/11;H05K3/46;H01L23/498;H01L21/48;H05K3/00 主分类号 H01L21/84
代理机构 Jianq Chyun IP Office 代理人 Jianq Chyun IP Office
主权项 1. A substrate structure, comprising: a substrate, comprising a dielectric layer, a plurality of pads, a patterned solder mask, a first through hole, a first surface, and a second surface opposite to the first surface, the plurality of pads being respectively disposed on two opposite surfaces of the dielectric layer, the patterned solder mask covering the two opposite surfaces and exposing the plurality of pads, wherein the first through hole penetrates the substrate for connecting the first surface and the second surface and the first through hole penetrates the dielectric layer and the patterned solder mask; and a carrier, comprising a second through hole, a release layer, an insulating paste layer, and a metal layer, wherein the insulating paste layer is disposed between the release layer and the metal layer, the carrier is attached to the second surface by attaching the release layer to the second surface and contacting the release layer with the patterned solder mask, the second through hole corresponds to the first through hole and penetrates the carrier for exposing the first through hole, and a smallest diameter of the second through hole is greater than a largest diameter of the first through hole.
地址 Hsinchu County TW