发明名称 |
Three dimensional logic circuit |
摘要 |
A 3D multi-bit flip-flop may include a two tier structure. The two tier structure may include a first tier containing a common clock circuit for the multi-bit flip-flop as well as the clock driven portions of the individual flip-flops and a second tier containing a common scan circuit for the multi-bit flip-flop as well as the non-clock driven portions of the individual flip-flops. Alternatively, the first tier may include the common clock circuit as well as a portion of the individual flip-flops and the second tier may include the common scan circuit as well as the other portion of the individual flip-flops. |
申请公布号 |
US9537471(B2) |
申请公布日期 |
2017.01.03 |
申请号 |
US201514617885 |
申请日期 |
2015.02.09 |
申请人 |
QUALCOMM Incorporated |
发明人 |
Kamal Pratyush |
分类号 |
H03K3/356;H03K3/012;H03K3/3562;G11C19/28;H01L27/06;G11C19/34 |
主分类号 |
H03K3/356 |
代理机构 |
Muncy, Geissler, Olds & Lowe, P.C. |
代理人 |
Muncy, Geissler, Olds & Lowe, P.C. |
主权项 |
1. An integrated circuit, comprising:
a multi-bit flip-flop circuit with a plurality of single bit flip-flop circuits, each single bit flip-flop circuit of the plurality of single bit flip-flop circuits comprises a clocked portion driven by a clock signal and a non-clocked portion; a common clock circuit, each of the clocked portions of the plurality of single bit flip-flop circuits being connected to the common clock circuit; a common scan circuit, each of the non-clocked portions of the plurality of single bit flip-flop circuits are connected to the common scan circuit; wherein the clocked portions of the plurality of single bit flip-flop circuits are in a first tier and each of the clocked portions comprises a master latch component, a slave latch component, and a plurality of transmission gates; and wherein the non-clocked portions of the plurality of single bit flip-flop circuits are in a second tier positioned above the first tier and each of the non-clocked portions comprises a data input, an inverted data input, a scan input, and a plurality of input/output transistors. |
地址 |
San Diego CA US |