Nanostructure semiconductor light emitting device

摘要

A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructures have different shapes.

主权项

1. A nanostructure semiconductor light emitting device, comprising:
a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer on the nanocore; a contact electrode on the plurality of light emitting nanostructures to be electrically connected to the second conductivity-type semiconductor layer; a first electrode electrically connected to the base layer; a second electrode covering a portion of the contact electrode on at least one of light emitting nanostructures in the second region among the plurality of light emitting nanostructures; and an insulating protective layer on the first region, the insulating protective layer filling spaces between each of the plurality of light emitting nanostructures in the first region, each of the light emitting nanostructures in the second region being exposed from the insulating protective layer; wherein the light emitting nanostructures in the second region have a greater impact resistance than the light emitting nanostructures in the first region.