Complementary SOI lateral bipolar transistors with backplate bias

摘要

A complementary bipolar junction transistor (BJT) integrated structure and methods for fabricating and operating such. The structure includes a monolithic substrate and conductive first and second backplates electrically isolated from each other. An NPN lateral BJT is superposed over the first backplate, and a PNP lateral BJT is superposed over the second backplate. A buried oxide (BOX) layer is positioned between the NPN lateral BJT and the first backplate, and between the PNP lateral BJT and the second backplate.

主权项

1. A complementary bipolar junction transistor (BJT) integrated structure comprising:
a monolithic substrate; an electrically conductive first backplate positioned over the monolithic substrate; an electrically conductive second backplate positioned over the monolithic substrate, the first backplate and the second backplate being electrically isolated from each other; an NPN lateral BJT superposing the first backplate, the NPN lateral BJT configured to conduct electricity horizontally between an NPN emitter and an NPN collector when the NPN lateral BJT is active; a PNP lateral BJT superposing the second backplate, the PNP lateral BJT configured to conduct electricity horizontally between a PNP emitter and a PNP collector when the PNP lateral BJT is active; and a first buried oxide (BOX) layer positioned between the NPN lateral BJT and the first backplate, and between the PNP lateral BJT and the second backplate.