| 摘要 |
The invention relates to a method for mapping crystal orientations in a polycrystalline material, the method comprising: receiving (21) a series of images of the polycrystalline material, said images being acquired by an acquiring device such as a scanning electron microscope or focused ion beam, for different illumination geometries, such as for various angles of inclination of said material; estimating (22), from the series of images, at least one intensity profile for at least one considered point of the material, each intensity profile representing the intensity associated with the considered point as a function of the illumination geometry; and determining (24) a crystal orientation for each considered point of the material by comparing (23) the intensity profile associated with said considered point to theoretical intensity profile signatures of known crystal orientations, said signatures being contained in a database. |
