Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

摘要

According to the present invention, a Cu-Ga alloy sputtering target which is a sintered body has a composition with 29.5 atom% to 43.0 atom% of Ga and a balance of Cu and inevitable impurities. A Cu-Ga alloy crystal particle in the sintered body has a structure in which ³ phase particles are dispersed in a ³ 1 -phase crystal particle. A method for producing the sputtering target includes a step of performing normal pressure sintering by heating a molded body formed of a powder mixture of a pure Cu powder and a Cu-Ga alloy powder in a reducing atmosphere, and a step of cooling the obtained sintered body at a cooling rate of 0.1°C/min to 1.0°C/min, at a temperature having a range of 450°C to 650°C.