METHOD FOR ETCHING MATERIAL LONGITUDINALLY SPACED FROM ETCH MASK

摘要

A micromachining process forms a plurality of layers on a wafer. This plurality of layers includes both a support layer and a given layer. The process also forms a mask, with a mask hole, at least in part on the support layer. In this configuration, the support layer is positioned between the mask hole and the given layer, and longitudinally spaces the mask hole from the given layer. The process also etches a feature into the given layer through the mask hole.