METHODS OF REVISING OVERLAY CORRECTION DATA

摘要

Provided are methods of generating and revising overlay correction data, a method of performing a photolithography process using the overlay correction data, and a method of performing a photolithography process while revising the overlay correction data. The method of revising the overlay correction data includes forming a plurality of overlay keys on a first set of wafers using first overlay correction data, measuring first overlay keys formed on first overlay coordinates in a first shot area of a first wafer among the first set of wafers, generating first overlay error data, and revising primarily the first overlay correction data using the first overlay error data, measuring second overlay keys formed on second overlay coordinates in a second shot area of a second wafer among the first set of wafers, generating second overlay error data, and revising secondarily the primarily revised first overlay correction data using the second overlay error data, and measuring third overlay keys formed on third overlay coordinates in a third shot area of a third wafer among the first set of wafers, generating third overlay error data, revising tertiarily the secondarily revised first overlay correction data, and generating second overlay correction data. The first overlay coordinates, the second overlay coordinates, and the third overlay coordinates are mutually exclusive.

主权项

1. A method of revising overlay correction data, comprising:
preparing a plurality of wafers each having a plurality of overlay coordinates in a plurality of shot areas, wherein the plurality of shot areas include mutually exclusive first and second shot area groups, the overlay coordinates include first and second mutually exclusive overlay coordinate groups, and the wafers include first and second mutually exclusive wafer groups; forming overlay keys on the overlay coordinates in the shot areas of the wafers by performing a photolithography process using first overlay correction data; selecting a first wafer from the first wafer group, measuring first overlay errors of the overlay keys on the first overlay coordinates in the shot areas of the first shot area group on the first wafer, and performing a first revision of or revising primarily, the first overlay correction data using the first overlay errors; and selecting a second wafer from the second wafer group, measuring second overlay errors of the overlay keys on the second overlay coordinates in the shot areas of the second shot area group on the second wafer, and performing a second revision of, or revising secondarily, the primarily revised first overlay correction data using the second overlay errors.