LIGHT-RECEIVING ELEMENT AND OPTICAL INTEGRATED CIRCUIT

摘要

A light-receiving element (10) according to the present invention is characterized by having: a semiconductor layer (100) that has a p-type semiconductor region (101), an n-type semiconductor region (102), and a multiplication region (103); and a p-type light-absorbing layer (104) formed on the multiplication region, the p-type semiconductor region and the n-type semiconductor region being formed sandwiching the multiplication region in the planar direction of the semiconductor layer. It is thus easily possible to realize, with a monolithic manufacturing process, a light-receiving element having avalanche photodiode functionality.