METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

This invention is provided with: a step (S01) for readying a semiconductor substrate having a first main surface and a second main surface located on the opposite side of the first main surface; a step (S02) for forming a first electrode on the first main surface; a step (S03) for forming a solder-bonding metal film (first solder-bonding metal film) on the first electrode; a step (S04) for forming a sacrificial film on the first solder-bonding metal film; a step (S06) for grinding the second main surface after the sacrificial film has been formed; a step (S07) for performing, after the grinding step (S06), a heat treatment (an element structure being formed on the third main surface side in (S07)); a step (S10) for removing the sacrificial film after the heat treatment step (S07); and a step (S12) for solder-bonding the first solder-bonding metal film and the first external electrode.