| 发明名称 |
Controlling Reverse Conducting IGBT |
| 摘要 |
A method for controlling a first switch and a second switch is suggested, wherein each switch is an RC-IGBT and wherein both switches are arranged as a half-bridge circuit. The method includes: controlling the first switch in an IGBT-mode; controlling the second switch such that it becomes desaturated when being in a DIODE-mode; wherein controlling the second switch starts before and lasts at least as long as the first switch changes its IGBT-mode from blocking state to conducting state. |
| 申请公布号 |
US2016352326(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201514725269 |
申请日期 |
2015.05.29 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Laven Johannes Georg;Rettinger Heiko;Baburske Roman |
| 分类号 |
H03K17/567 |
主分类号 |
H03K17/567 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for controlling a first switch and a second switch, wherein each switch is an RC-IGBT and wherein both switches are arranged as a half-bridge circuit, the method comprising:
controlling the first switch in an IGBT-mode; controlling the second switch such that it becomes desaturated when being in a DIODE-mode; wherein controlling the second switch starts before and lasts at least as long as the first switch changes its IGBT-mode from blocking state to conducting state, wherein the first switch and the second switch are controlled in a pulse-width-modulation at a switching frequency that is higher than a frequency of a load current. |
| 地址 |
Neubiberg DE |
