RESISTIVE RANDOM ACCEESS MEMORY

摘要

A resistive random access memory is provided. The resistive memory cell includes a substrate, a transistor on the substrate, a bottom electrode on the substrate and electrically connected to the transistor source/drain, several top electrodes on the bottom electrode, several resistance-switching layers between the top and bottom electrode, and several current limiting layers between the resistance-switching layer and top electrodes. The cell could improve the difficulty on recognizing 1/0 signal by current at high temperature environment and save the area on the substrate by generating several conductive filaments at one transistor location.

主权项

1. A resistive random access memory, comprising:
a substrate; a transistor, disposed on the substrate; a bottom electrode, disposed on the substrate and electrically connected to a source/drain of the transistor; a plurality of top electrodes, disposed on the bottom electrode; a plurality of resistance-switching layers, respectively disposed between the bottom electrode and the plurality of top electrodes; and a plurality of current limiting layers, respectively disposed between the plurality of resistance-switching layers and the plurality of top electrodes.