| 发明名称 |
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
An integrated circuit device is provided as follows. A connection terminal is disposed on a first surface of a semiconductor structure. A conductive pad is disposed on a second surface, opposite to the first surface, of the semiconductor structure. A through-substrate-via (TSV) structure penetrates through the semiconductor structure. An end portion of the TSV structure extends beyond the second surface of the semiconductor structure. The conductive pad surrounds the end portion of the TSV structure. The connection terminal is electrically connected to the conductive pad through the TSV structure |
| 申请公布号 |
US2016351472(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201615053410 |
申请日期 |
2016.02.25 |
| 申请人 |
PARK MYEONG-SOON;CHUNG HYUN-SOO;LEE CHAN-HO |
发明人 |
PARK MYEONG-SOON;CHUNG HYUN-SOO;LEE CHAN-HO |
| 分类号 |
H01L23/48;H01L23/00;H01L23/532;H01L25/065 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit device comprising:
a semiconductor structure; a connection terminal disposed on a first surface of the semiconductor structure; a conductive pad disposed on a second surface, opposite to the first surface, of the semiconductor structure; a through-substrate-via (TSV) structure penetrating through the semiconductor structure, wherein an end portion of the TSV structure extends beyond the second surface of the semiconductor structure, wherein the conductive pad surrounds the end portion of the TSV structure, and wherein the connection terminal is electrically connected to the conductive pad through the TSV structure. |
| 地址 |
GOYANG-SI KR |
