发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
The purpose of the invention is to provide a fine transistor. Another purpose of the invention is to provide a transistor with low parasitic capacitance. Another purpose of the invention is to provide a transistor with high frequency characteristics. Another purpose of the invention is to provide a novel transistor. Provided is a method for manufacturing a transistor, comprising a semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator, wherein: a hard mask layer that has a fourth conductor on the second insulator and a third insulator on the fourth conductor is formed; an opening is formed on the second insulator using the hard mask layer as a mask; the hard mask layer is removed by the formation of the opening; and the first insulator and the first conductor are formed at the opening. |
申请公布号 |
WO2016189425(A1) |
申请公布日期 |
2016.12.01 |
申请号 |
WO2016IB52879 |
申请日期 |
2016.05.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KURATA, Motomu;SASAGAWA, Shinya;TOCHIBAYASHI, Katsuaki;OKAMOTO, Satoru;SHIMOMURA, Akihisa |
分类号 |
H01L21/336;H01L21/28;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/8247;H01L27/06;H01L27/08;H01L27/088;H01L27/092;H01L27/105;H01L27/108;H01L27/115;H01L27/146;H01L29/417;H01L29/423;H01L29/49;H01L29/786;H01L29/788;H01L29/792;H01L51/50;H05B33/14 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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