| 摘要 |
PROBLEM TO BE SOLVED: To enhance data reading accuracy in a semiconductor storage device.SOLUTION: A semiconductor storage device 10 includes a memory bank 11 having a plurality of memory cells, and a read/write circuit 14 which compares a reading current Imem which flows through a memory cell MC1 being an access object during reading data from the memory bank 11 and a predefined reference current Iref to create an output data signal DOUT1. The read/write circuit 14 detects a parasite leak current Ileak flowing through a memory cell not being the access object and variably controls a reference current Iref, before the reading of the data from the memory bank 11. |
