发明名称 半導体装置の製造方法
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can correct the cleaving position and direction of a semiconductor wafer 11 so that the cleavage progresses at a nearer position and in a nearer direction to a cleavage line along which the cleavage should be originally performed when a starting point of the cleavage of the semiconductor wafer 11 is displaced.SOLUTION: A concave portion 22 is formed on at least one of first and second principal surfaces 11A, 11B in a dummy forming area of a semiconductor wafer 11 so as to be overlapped with a cleavable cleavage line 15 of the semiconductor wafer 11, the dummy forming area being, in plan view, away from an element forming area of a semiconductor wafer 11 on which a semiconductor element pattern 12 is formed. A scratch 17 is formed on the first principal surface 11A, and the semiconductor wafer 11 is cleaved along the cleavage line 15 with the scratch 17 set as a starting point. The scratch 17 is formed along the cleavage line 15 on a part of the cleavage line 15 on which the concave portion 22 is formed.
申请公布号 JP6033251(B2) 申请公布日期 2016.11.30
申请号 JP20140048993 申请日期 2014.03.12
申请人 三菱電機株式会社 发明人 石橋 祐太郎;吉川 兼司
分类号 H01L21/301;H01S5/02 主分类号 H01L21/301
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