| 摘要 |
PROBLEM TO BE SOLVED: To stabilize growth conditions of a silicon carbide single crystal by suppressing occurrence of an electric discharge in a growth furnace.SOLUTION: A manufacturing method for silicon carbide single crystal is a manufacturing method for silicon carbide single crystal by a sublimation method using a growth furnace 1, and the temperature in the growth furnace 1 is raised up to a predetermined temperature G1 by applying a voltage having a first amplitude to a resistance type heater 2. A silicon carbide single crystal is grown at the predetermined temperature G1. The pressure in the growth furnace 1 in the temperature raising process is higher than the pressure in the growth furnace 1 in the growth process. In the growth process, a voltage having a second amplitude smaller than the first amplitude is applied to the resistance type heater 2. |
