| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which uses an oxide semiconductor layer and has less variation in electric characteristics; and provide a fine semiconductor device capable of high-speed drive and a high-speed operation, which is highly reliable and exhibits stable electric characteristics; and manufacture the semiconductor device.SOLUTION: A semiconductor device comprises: a multilayer film including an oxide semiconductor layer and an oxide layer which enwraps the oxide semiconductor layer: a laminate of a gate insulation film on the multilayer film and a gate electrode; a source electrode and a drain electrode; and a protective insulation film on the multilayer film, the gate insulation film, the gate electrode, the source electrode and the drain electrode. The multilayer film has a cross section with ends each having curvature. |
