发明名称 |
LOW TEMPERATURE WAFER BONDING |
摘要 |
A method of low temperature wafer bonding is provided. The method comprises: providing oxide to form a bonding layer on a deposition surface of at least one of two wafers, the bonding layer having a thickness in the range of 100 Angstroms to 500 Angstroms; soaking the wafers in a solution that makes bonding surfaces of the wafers hydrophilic; rinsing the wafers with water after soaking the wafers in the solution that makes bonding surfaces of the wafers hydrophilic; drying the wafers; optical-contact bonding the wafers with each other by bringing the bonding layers of the wafers in contact with each other to form a wafer pair; and annealing the wafer pair at a temperature less than or equal to 500° Celsius. |
申请公布号 |
EP3098836(A1) |
申请公布日期 |
2016.11.30 |
申请号 |
EP20160168666 |
申请日期 |
2016.05.06 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
ENDEAN, DANIEL;MARTIN, ROBERT R.;HORNING, ROBERT D. |
分类号 |
H01L21/20;H01L21/762 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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