A trench comprising a portion of a substrate is formed. A nucleation layer is deposited on the portion of the substrate within the trench. A III-N material layer is deposited on the nucleation layer. The III-N material layer is laterally grown over the trench. A device layer is deposited on the laterally grown III-N material layer. A low defect density region is obtained on the laterally grown material and is used for electronic device fabrication of III-N materials on Si substrates.
申请公布号
EP3097583(A1)
申请公布日期
2016.11.30
申请号
EP20140879318
申请日期
2014.12.12
申请人
INTEL CORPORATION
发明人
DASGUPTA, SANSAPTAK;THEN, HAN WUI;GARDNER, SANAZ K.;SUNG, SEUNG HOON;RADOSAVLJEVIC, MARKO;CHU-KUNG, BENJAMIN;TAFT, SHERRY;PILLARISETTY, RAVI;CHAU, ROBERT S.