| 摘要 |
A compound semiconductor device is provided with a compound semiconductor layer and a gate electrode formed on the compound semiconductor layer via a gate insulating film, in which the gate insulating film is one in which SixNy is contained as an insulating material, SixNy is 0.638≦̸x/y≦̸0.863, and a hydrogen-terminated group concentration is set to a value within a range of not less than 2×1022/cm3 nor more than 5×1022/cm3. |
