Bipolar power semiconductor transistor

摘要

A bipolar power semiconductor transistor 100 or method of manufacturing the same comprises a semiconductor drift region 130 of a second conductivity type comprising 4-step hexagonal silicon carbide (4H-SiC); a first semiconductor region 110 comprising 3-step cubic silicon carbide (3C-SiC) of a first conductivity type disposed over a first surface of the semiconductor drift region; a 3C-SiC body region 140 of the first conductivity type located on or within the semiconductor drift region; the body region being adjacent to a second surface of the drift region opposite the first surface of the drift region; a source region 150 (which may be 3C-SiC) of the second conductivity type located within the body region; and a gate 180 placed above the source region, the gate controls charge in a channel region 170 between the semiconductor drift region and the source region and thereby controls flow of charge within the semiconductor drift region. The device may include a buffer region between the first semiconductor region and the semiconductor drift region.