发明名称 SOI基板、SOI基板の製造方法および半導体装置の製造方法
摘要 An insulating portion has a first region, a second region, and a third region in the stated order from the silicon portion side, the nitrogen concentration of the first region is lower than the nitrogen concentration of the second region and the oxygen concentration of the first region, the nitrogen concentration of the third region is lower than the nitrogen concentration of the second region and the oxygen concentration of the third region, and the thickness of the first region is larger than the thickness of the third region.
申请公布号 JP6032963(B2) 申请公布日期 2016.11.30
申请号 JP20120138384 申请日期 2012.06.20
申请人 キヤノン株式会社 发明人 國米 和夫
分类号 H01L21/02;H01L21/336;H01L27/12;H01L27/146;H01L29/786 主分类号 H01L21/02
代理机构 代理人
主权项
地址