发明名称 WAFER LEVEL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 The present invention discloses a wafer-level semiconductor device and a manufacturing method thereof. The wafer-level semiconductor device comprises a wafer-level substrate; a plurality of serial groups formed on a surface of the substrate and are disposed in parallel, each serial group comprising a plurality of parallel groups disposed in series, each parallel groups comprising a plurality of unit cells disposed in parallel, wherein each unit cell is an independent functional unit which is formed by processing a semiconductor layer directly grown on a surface of the substrate; and a lead, which is at least electrically connected between two selected parallel groups in each serial group to make ON-voltages of all the serial groups substantially consistent. The device of the present invention, with a simple structure, a simple and convenient manufacturing process, and a high efficiency to produce qualified products, can be put into large-scale production and application.
申请公布号 EP3098852(A1) 申请公布日期 2016.11.30
申请号 EP20150740811 申请日期 2015.01.16
申请人 SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS OFCHINESE ACADEMY OF SCIENCES 发明人 CAI, YONG;ZHANG, YIBIN;XU, FEI
分类号 H01L27/15;H01L23/367;H01L25/075;H01L33/00;H01L33/62;H01L33/64 主分类号 H01L27/15
代理机构 代理人
主权项
地址