发明名称 |
WAFER LEVEL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
The present invention discloses a wafer-level semiconductor device and a manufacturing method thereof. The wafer-level semiconductor device comprises a wafer-level substrate; a plurality of serial groups formed on a surface of the substrate and are disposed in parallel, each serial group comprising a plurality of parallel groups disposed in series, each parallel groups comprising a plurality of unit cells disposed in parallel, wherein each unit cell is an independent functional unit which is formed by processing a semiconductor layer directly grown on a surface of the substrate; and a lead, which is at least electrically connected between two selected parallel groups in each serial group to make ON-voltages of all the serial groups substantially consistent. The device of the present invention, with a simple structure, a simple and convenient manufacturing process, and a high efficiency to produce qualified products, can be put into large-scale production and application. |
申请公布号 |
EP3098852(A1) |
申请公布日期 |
2016.11.30 |
申请号 |
EP20150740811 |
申请日期 |
2015.01.16 |
申请人 |
SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS OFCHINESE ACADEMY OF SCIENCES |
发明人 |
CAI, YONG;ZHANG, YIBIN;XU, FEI |
分类号 |
H01L27/15;H01L23/367;H01L25/075;H01L33/00;H01L33/62;H01L33/64 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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