| 摘要 |
The present invention aims to relax stress induced by through-silicon via formed on semiconductor substrate in order to prevent property fluctuation of a transistor. A semiconductor device includes a semiconductor substrate, a through-silicon via formed in semiconductor substrate, an insulating film formed between the semiconductor substrate and the through-silicon via, and a transistor formed on the semiconductor substrate so as to be apart from the through-silicon via with a predetermined distance. The insulating film does not exist on a region close to a surface of the semiconductor substrate between the semiconductor substrate and the through-silicon via. A gap is formed to be surrounded by the semiconductor substrate, the through silicon via, and the insulating film under the region close to the surface of the semiconductor substrate. |
