| 摘要 |
PROBLEM TO BE SOLVED: To improve the electrical characteristics of a semiconductor device having a trench.SOLUTION: The semiconductor device comprises: a first n-type semiconductor layer in which a protrusion having an upper surface is formed; a first p-type semiconductor layer bonded to the upper surface of the protrusion; a second n-type semiconductor layer laminated over the first n-type semiconductor layer and the first p-type semiconductor layer; a second p-type semiconductor layer laminated on the second n-type semiconductor layer; a third n-type semiconductor layer laminated on the second p-type semiconductor layer; and a groove, recessed from the third n-type semiconductor layer, penetrating the second p-type semiconductor layer and the second n-type semiconductor layer and reaching the first p-type semiconductor layer. |
