摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor memory enabling data readout with high accuracy through reducing influence of parasitic capacitance between bit lines.SOLUTION: Semiconductor memory includes: selector elements configured to turn one main bit line on at different timing to each other; and sub bit lines coupled to each of the selector elements; a memory cell coupled to each of the sub bit lines, and a constant electric potential line juxtaposed to the main bit line and coupled to a constant electric potential. |