发明名称 半導体メモリ
摘要 PROBLEM TO BE SOLVED: To provide semiconductor memory enabling data readout with high accuracy through reducing influence of parasitic capacitance between bit lines.SOLUTION: Semiconductor memory includes: selector elements configured to turn one main bit line on at different timing to each other; and sub bit lines coupled to each of the selector elements; a memory cell coupled to each of the sub bit lines, and a constant electric potential line juxtaposed to the main bit line and coupled to a constant electric potential.
申请公布号 JP6034417(B2) 申请公布日期 2016.11.30
申请号 JP20150030579 申请日期 2015.02.19
申请人 ラピスセミコンダクタ株式会社 发明人 篠田 建
分类号 G11C16/06;G11C16/04;H01L21/336;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/06
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