发明名称 Millimeter wave bands semiconductor device
摘要 Certain embodiments provide a millimeter wave bands semiconductor device including a first metal block, a second metal block, and a circuit board. The first metal block includes a first penetration hole and a second penetration hole, each of which has a flattening film on an inner surface thereof. The second metal block includes a first non-penetration hole and a second non-penetration hole, each of which has a flattening film on an inner surface thereof. The circuit board is disposed between the first metal block and the second metal block and has an input signal line and an output signal line on a front side surface thereof. The first metal block and the second metal block are disposed such that the first non-penetration hole and the first penetration hole constitute a first waveguide and the second non-penetration hole and the second penetration hole constitute a second waveguide.
申请公布号 EP2911234(B1) 申请公布日期 2016.11.30
申请号 EP20140177700 申请日期 2014.07.18
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKAGI, KAZUTAKA
分类号 H01P5/107;H01L23/48;H01L23/66;H01P3/12;H01P11/00 主分类号 H01P5/107
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