| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor silicon wafer having a constitution in which the guttering capability of an ion implantation layer can be brought out to the maximum by arranging the ion implantation layer as much as optimum in order to compensate for shortcomings included in implantation layers.SOLUTION: A silicon wafer that is a substrate for manufacturing a semiconductor device has an ion implantation layer including two layers of a carbon ion implantation layer formed in the vicinity of a surface layer of the silicon wafer and functioning as a guttering layer, and a boron ion implantation layer formed at a deeper position than the carbon ion implantation layer and functioning as a guttering layer.SELECTED DRAWING: Figure 1 |
